Slicone Carbide Electronic Conductive

Slicone Carbide Electronic Conductive

Solution Description

Silicone Carbide Ceramic
 
Silicon carbide is composed of tetrahedra of carbon and silicon atoms with robust bonds in the crystal lattice. This series ceramics have been commonly utilized in petroleum, chemical, automotive, mechanical and aerospace industries since of their outstanding resistance to thermal shock, large temperatures, oxidation and chemical corrosion.

Homes :

Low density
Higher strength
Large hardness
Higher elastic modulus
Lower thermal growth
Substantial thermal conductivity
Superior chemical inertness
Excellent thermal shock resistance 
Isolated wave absorption performance.

 

Software:

LED-Tv set Lcd-TV 
Notebook 
M/B(Mom board) 
Power Transistor Traic 
 Power Module 
Chip IC MOS IGBT 
Network/ADSL
 
Silicon carbide is not attacked by any acids or alkalis or molten salts up to 800°C. In air, SiC forms a protective silicon oxide coating at 1200°C and is in a position to be employed up to 1600°C. The substantial thermal conductivity coupled with low thermal expansion and substantial toughness give this substance outstanding thermal shock resistant characteristics. 
 
Chemical purity, resistance to chemical assault at temperature, and toughness retention at substantial temperatures has manufactured this materials very well-known as wafer tray supports and paddles in semiconductor furnaces. 
 
The electrical conduction of the materials has guide to its use in resistance heating elements for electric furnaces, and as a key ingredient in thermistors (temperature variable resistors) and in varistors (voltage variable resistors).
 

PROPERTIES  TABLE
Item  Price Unit  Remark
Coloration Environmentally friendly Visual
Porosity  20 % CNS619
Water Absorption fifteen.seventy seven % CNS619
Mohs’ Hardness five~6 N/mm2 DIN EN101-1992
Flexural Toughness 47.five Kgf/cm2 CNS12701(1990)
Resistance Insulation 10                   1000VDC,1mimute
Thermal Conductivity ten w/m-k
Max Use Temperature <700 ºC
Dielectric Withstanding Voltage ten KV
Thermal Expansion Coefficient 4.13 10¯6
Main Composition ninety%↑ SiC
Measurement 10×10 / 20×20 / 30×30 mm

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Slicone Carbide Electronic Conductive